Beyond pure physics, the text provides the technological foundation for stable device performance: Explains the growth of SiO2cap S i cap O sub 2
A power management IC fails after 6 months in the field. The drain current at low V_gs is 20% below spec. Diagnosis: hot carrier injection in the output MOSFET. TEM (transmission electron microscopy) shows interface trap generation near drain. Solution: modify LDD implant and reduce max V_ds by 0.2V. Beyond pure physics, the text provides the technological
Allow users to simulate and G-V (conductance-voltage) characteristics of an MOS capacitor based on Nicollian & Brews’ models, including: Beyond pure physics
The book covers critical topics necessary for semiconductor research and fabrication: Theory of MOS Capacitors Beyond pure physics, the text provides the technological